• Jun 14, 2017 News!Vol.8, No.5 has been indexed by EI (Inspec).   [Click]
  • Apr 24, 2018 News!Vol.10, No.2 has been published with online version.   [Click]
  • Mar 02, 2018 News!Vol.10, No.1 has been published with online version.   [Click]
General Information
Editor-in-chief
Prof. Wael Badawy
Department of Computing and Information Systems Umm Al Qura University, Canada
I'm happy to take on the position of editor in chief of IJCTE. We encourage authors to submit papers concerning any branch of computer theory and engineering.
IJCTE 2018 Vol.10(1): 30-37 ISSN: 1793-8201
DOI: 10.7763/IJCTE.2018.V10.1195

Analysis Investigation of a Novel High-Permittivity Trench MOS Device with Small Figures of Merit

Junhong Li and Kun Xiao
Abstract—We propose a vertical high-permittivity trench power metal oxide semiconductor (HKTMOS) device with an alternating N&P drift regions and high-permittivity (HK) trench sandwiched in between. The unique structure guarantees uniform potential distribution for a wide voltage range at the blocking state owing to both the HK potential modulation effect and the superjunction (SJ) charge balance. The specific on-resistance (Rons) of HKTMOS is orders of magnitude lower than the SJ counterparts in the on-state because of the strong accumulation effect brought by the HK trenches. Although the gate charges also significantly rise because of the accumulation, the figures of merit (FOM) of HKTMOS still decrease considerably compared to the SJ under the same device length condition. An expression for the FOM is derived, demonstrating that the FOM of HKTMOS is proportional to the square of the HK trench depth, which agrees with the simulation results well. The simulation indicates that within the BV range of 500~2000 V, the Rons of HKTMOS is 1~2 orders of magnitude lower than that of SJ, and its FOM is 17.4%~44.1% that of SJ under the same device size condition. Furthermore, HKTMOS also demonstrates better charge imbalance tolerance than SJ.

Index Terms—High permittivity, figures of merit, specific on resistance, power MOS.

The authors are with the State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China (e-mail: Jefferyli@uestc.edu.cn).

[PDF]

Cite:Junhong Li and Kun Xiao, "Analysis Investigation of a Novel High-Permittivity Trench MOS Device with Small Figures of Merit," International Journal of Computer Theory and Engineering vol. 10, no. 1, pp. 30-37, 2018.

Copyright © 2008-2018. International Journal of Computer Theory and Engineering. All rights reserved.
E-mail: ijcte@iacsitp.com