DOI: 10.7763/IJCTE.2013.V5.821
High Power and Low Phase Noise MMIC VCO Using 0.35m GaN-on-Si HEMT
Abstract—A low phase noise and high power MMIC VCO using GaN-on-Si is presented. The VCO is based on common source series feedback to generate the negative resistance, using 0.35 μm GaN HEMT on silicon substrate technology. The VCO can be tuned, between 3.92 GHz and 4.39 GHz, and has low phase noise, of-119 dBc/Hz, at a 1 MHz offset. The output power of the VCO is 14.5 dBm at 4.2 GHz from a 20 V power supply, while the total die size was 1.35 mm2.
Index Terms—VCO, output power, phase noise, GaN HEMT, GaN-on-Si.
The authors are with Dept. of Electronic Engineering, Chang Gung Univ., Tao-Yuan, Taiwan (e-mail: snoopy@mail.cgu.edu.tw).
Cite:Hsuan-ling Kao, Bo-Wen Wang, Chih-Sheng Yeh, Cheng-Lin Cho, Bai-Hong Wei, and Hsien-Chin Chiu, "High Power and Low Phase Noise MMIC VCO Using 0.35m GaN-on-Si HEMT," International Journal of Computer Theory and Engineering vol. 5, no. 6, pp. 910-913, 2013.