doi: 10.7763/IJCTE.2013.V5.824
Finite Element Modeling of Copper Wire Bonding on a Stacked-Die in Semiconductor Devices
,
Pooria Pasbakhsh1
,
N. Q. Guo1,3 ,
Norhazlina Ismail2 ,
Kheng Lim Goh3
- 1Monash University Sunway Campus, Bandar Sunway, Malaysia
- 2MIMOS, Technology Park Malaysia, Kuala Lumpur, Malaysia
- 3Newcastle University Singapore Campus, Singapore.
Abstract
Finite element analysis of wire bonding on the overhang of a stacked-die was conducted. The stresses and deflection of the die was determined through the use of the commercially available solver ANSYS. In this study, the finite element model was used to simulate copper wire bonding on a stacked-die application. Copper with its higher hardness required more force to deform. The increase in force generates greater stresses on the die especially on the overhang region. This creates a scenario where the die is under a large amount of stress and may result in cracks. The study aims to determine the stresses and deflections of the die when bonding is carried out on the overhang of the die. It was discovered that the stresses and deflection of the die increases as the distance from the stacked die increases. The study also determined that increasing the thickness of the die leads to decrease in bending stress and deflection of the die.
Keywords
- Die deflection
- finite element analysis
- stacked die
- copper wire bonding
- overhang region
- cracks
How to Cite
Xin Kai Tam, Pooria Pasbakhsh, N. Q. Guo, Norhazlina Ismail, and Kheng Lim Goh, "Finite Element Modeling of Copper Wire Bonding on a Stacked-Die in Semiconductor Devices," International Journal of Computer Theory and Engineering, vol. 5, no. 6, pp. 924-927, 2013. https://doi.org/10.7763/IJCTE.2013.V5.824
Copyright & License
Copyright © 2013 by the authors. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).