doi: 10.7763/IJCTE.2011.V3.407
1P6M 0.18-μm Low Power CMOS Ring Oscillator for Radio Frequency Applications
Ashish Raman
,
R. K. Sarin
- Department of Electronics and Communications Engineering, National Institute of Technology, Jalandhar, India.
Abstract
The monograph analysis a low power voltage controlled ring oscillator, implement using the 1P6M 0.18μm CMOS process provided by TSMC with 1.8 volts power supply. The circuit is a modification of conventional ring oscillator. Atail current improvement is applied to reduce the charging and discharging time. The output frequency ranges from 0.958-4.43 GHz with control voltages of 1 V to 1.8 V. The simulated result of the phase noise is –94.5 dBc/Hz @ 1 MHz.The circuit draws 0.212 mW of power at<i> V<sub>tail</sub></i> = <i>V<sub>ctrl</sub></i> = 1V and 0.226 mW at <i>V</i><sub><i>tail</i> </sub>= <i>V<sub>ctrl</sub></i> = 1.8 V from the 1.8 V supply.
Keywords
- CMOS
- low power
- phase noise
- tail currentand voltage controlled oscillator (VCO)
How to Cite
Ashish Raman and R. K. Sarin, "1P6M 0.18-μm Low Power CMOS Ring Oscillator for Radio Frequency Applications," International Journal of Computer Theory and Engineering, vol. 3, no. 6, pp. 770-774, 2011. https://doi.org/10.7763/IJCTE.2011.V3.407
Copyright & License
Copyright © 2011 by the authors. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).