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General Information
Editor-in-chief
Prof. Wael Badawy
Department of Computing and Information Systems Umm Al Qura University, Canada
I'm happy to take on the position of editor in chief of IJCTE. We encourage authors to submit papers concerning any branch of computer theory and engineering.
IJCTE 2013 Vol.5(6): 910-913 ISSN: 1793-8201
DOI: 10.7763/IJCTE.2013.V5.821

High Power and Low Phase Noise MMIC VCO Using 0.35m GaN-on-Si HEMT

Hsuan-ling Kao, Bo-Wen Wang, Chih-Sheng Yeh, Cheng-Lin Cho, Bai-Hong Wei, and Hsien-Chin Chiu
Abstract—A low phase noise and high power MMIC VCO using GaN-on-Si is presented. The VCO is based on common source series feedback to generate the negative resistance, using 0.35 μm GaN HEMT on silicon substrate technology. The VCO can be tuned, between 3.92 GHz and 4.39 GHz, and has low phase noise, of-119 dBc/Hz, at a 1 MHz offset. The output power of the VCO is 14.5 dBm at 4.2 GHz from a 20 V power supply, while the total die size was 1.35 mm2.

Index Terms—VCO, output power, phase noise, GaN HEMT, GaN-on-Si.

The authors are with Dept. of Electronic Engineering, Chang Gung Univ., Tao-Yuan, Taiwan (e-mail: snoopy@mail.cgu.edu.tw).

[PDF]

Cite:Hsuan-ling Kao, Bo-Wen Wang, Chih-Sheng Yeh, Cheng-Lin Cho, Bai-Hong Wei, and Hsien-Chin Chiu, "High Power and Low Phase Noise MMIC VCO Using 0.35m GaN-on-Si HEMT," International Journal of Computer Theory and Engineering vol. 5, no. 6, pp. 910-913, 2013.

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